Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP4260050-47
Description
The RWP4260050-47 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for various communication system applications. Covering from 4200 to 6000 MHz, the RWP4260050-47 is designed with RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation.
View Product Specification
General telecommunications
Specification
| Min Freq. | 4200MHz |
|---|---|
| Max Freq. | 6000MHz |
| Type | Pallet |
| Typ Output Power | 50W |
| Power Gain | 47dB |
| PAE | 35% |
| VDC | 28 |
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