Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

The SDM26005-30H is a fully integrated micro-strip GaN Hybrid power amplifier module designed for 5G m-MIMO, TDD/FDD systems, mobile infrastructure, small cells and low power remote radio heads. The SDM26005-30H operates from 1805 to 1880 MHz and delivers a saturated power of 60 W. This amplifier is internally matched to 50 ohms over the entire operating frequency range and provides a drain voltage of 48V. The SDM26005-30H is available in a packaged ceramic surface mount package that measures 8x14x2.6mm.
View Product SpecificationMin Freq. | 2496MHz |
---|---|
Max Freq. | 2690MHz |
Typ Output Power | 3.16W |
Saturation Power | 60W |
Power Gain | 37dB |
Efficiency | 15% |
VDC | 48 |
Package | PP-3G |
Package Type | Surface Mount |