Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
SDM23005-30H
Description
TheSDM23005-30H is a fully integrated micro-strip GaN Hybrid power amplifier module designed for applications in 4G LTE MIMO systems, small cells and low power remote radio heads. The SDM23005-30H operates from 2300 to 2400 MHz and delivers a saturated power of 70.8 W. This amplifier is internally matched to 50 ohms over the entire operating frequency range and provides a drain voltage of 48V. The SDM23005-30H is available in a packaged ceramic surface mount package that measures 8x14x2.6mm.
View Product Specification
Massive MIMO
4G System
Multi-Band, Multi-Mode
Multi-Carrier
Specification
| Min Freq. | 2300MHz |
|---|---|
| Max Freq. | 2400MHz |
| Typ Output Power | 2W |
| Saturation Power | 70.8W |
| Power Gain | 41dB |
| Efficiency | 13% |
| VDC | 48 |
| Package | PP-3G |
| Package Type | Surface Mount |
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