Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

The SDM21007-30H is a fully integrated micro-strip GaN Hybrid power amplifier module designed for applications in 4G LTE MIMO systems, small cells and low power remote radio heads. SDM21007-30H operates from 2110 to 2200 MHz and delivers a saturated power of 79.4 W. This amplifier is internally matched to 50 ohms over the entire operating frequency range and provides a drain voltage of 48V. The SDM21007-30H is available in a packaged ceramic surface mount package that measures 8x14x2.6mm.
View Product SpecificationMin Freq. | 2110MHz |
---|---|
Max Freq. | 2200MHz |
Typ Output Power | 3.16W |
Saturation Power | 79.4W |
Power Gain | 40dB |
Efficiency | 16% |
VDC | 48 |
Package | PP-3G |
Package Type | Surface Mount |