Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFDHK
Description
RFHIC’s RFDHK is a gallium nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR and 4G LTE systems. Covering 3600 to 3800 MHz, the RFDHK provides an output power of 9.1W with high efficiency of 47.8%. The RFDHK is packaged in a compact hybrid surface mount (SMD) on an aluminum nitride (AIN) board for excellent thermal dissipation. The RFDHK is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 9.1W average power.To simplify system integration, the RFDHK is fully matched to 50 ohms with integrated DC blocking caps on both RF ports.
View Product Specification
5G NR system
4G/LTE system
Massive MIMO
Specification
| Min Freq. | 3600MHz |
|---|---|
| Max Freq. | 3800MHz |
| Typ Output Power | 9.1W |
| Saturation Power | 68.1W |
| Power Gain | 31dB |
| Efficiency | 48% |
| VDC | 40 |
| Package | PP-1S |
| Package Type | Surface Mount |
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