Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID36541D
Description
RFHIC’s ID36541D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3800 MHz.The ID36541D delivers 540 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 5G NR systems.
View Product Specification
WiMAX, 5G NR, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier
Specification
| Min Freq. | 3400MHz |
|---|---|
| Max Freq. | 3800MHz |
| Typ Output Power | 56.2W |
| Saturation Power | 540W |
| Power Gain | 13.6dB |
| Efficiency | 40% |
| VDC | 48 |
| Package | RF24009DKR3 |
| Package Type | Flange |
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