Products RF Transistors Transistors - Wireless Infrastructure ID41461DR

ID41461DR

Transistors - Wireless Infrastructure
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Description

RFHIC’s ID41461DR is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 3700 to 4100 MHz.The ID18461D delivers 468 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 5G NR systems.

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Datasheet

WiMAX, 5G NR, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

Specification

Min Freq.3700MHz
Max Freq.4100MHz
Typ Output Power48W
Saturation Power468W
Power Gain14.3dB
Efficiency50%
VDC48
PackageRF24008DKR3
Package TypeFlange

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