Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s RRF29314K0-660 is a 4000W, S-band, GaN solid-state transmitter designed for high-power radar applications. The RRF29314K0-660 is designed with RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) HEMT, providing excellent thermal stability and high voltage breakdown. This solid-state transmitter allows upgrading the existing VED (Vaccum Electronic Device, such as Klystron, Magnetron, Travelling Wave Tube, and Cross Field Amplifier) based transmitter for radar applications.
View Product SpecificationBand | S-band |
---|---|
Min Freq. | 2900MHz |
Max Freq. | 3100MHz |
Type | Rack |
Min Output Power | 4000W |
Operating Mode | Pulse |
Power Gain | 66dB |
VDC | 50 |
VAC | 115VAC 1Phase 50/60Hz |
Cooling | Air |
Dimension | 482.6(W) x 550(D) x 266(H) |