Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC’s RWP1027200-53 is a 200W, gallium-nitride (GaN) Wideband Power Amplifier designed for various defense applications. This gallium-nitride (GaN) wideband amplifier operates from 1000 to 2500 MHz and offers high reliability and ruggedness. The RWP1027200-53 is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product SpecificationMin Freq. | 1000MHz |
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Max Freq. | 2500MHz |
Type | Pallet |
Typ Output Power | 200W |
Power Gain | 50dB |
VDC | 36 |