Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
Part Number | Datasheet | Status | Min Freq. (MHz) | Max Freq. (MHz) | Typ Output Power (W) | Saturation Power (W) | Power Gain (dB) | Efficiency (%) | VDC | Package | Package Type |
ID18801D | Sample Available | 1805 | 1880 | 107.2 | 800 | 16.4 | 54.8 | 48 | RF26009DKKR3 | Flange | |
ID22801D | Sample Available | 2110 | 2170 | 104.7 | 762 | 15.9 | 53 | 48 | RF26009DKR3 | Flange | |
ID22701D | Sample Available | 2110 | 2170 | 81.3 | 700 | 15.8 | 53.5 | 48 | RF26009DKR3 | Flange | |
ID22461D | Sample Available | 2110 | 2170 | 56.2 | 460 | 16.9 | 57 | 48 | RF24008DKR3 | Flange | |
ID19701D | Sample Available | 1930 | 1995 | 81.3 | 692 | 16.4 | 49 | 48 | RF26009DKR3 | Flange | |
ID18701D | Sample Available | 1805 | 1880 | 81.3 | 700 | 16.2 | 54 | 48 | RF24008DKR3 | Flange | |
ID22441D | Production | 2110 | 2170 | 53.7 | 407 | 17.4 | 58 | 48 | RF24008DKR3 | Flange | |
ID23461D | Production | 2300 | 2400 | 56.2 | 460 | 16.2 | 56 | 48 | RF24008DKR3 | Flange | |
ID26461D | Production | 2620 | 2690 | 56.2 | 447 | 16.1 | 57 | 48 | RF24008DKR3 | Flange | |
ID19801D | Sample Available | 1930 | 1995 | 107.2 | 789 | 15.5 | 54 | 48 | RF26009DKR3 | Flange | |
ID36541D | Production | 3400 | 3800 | 56.2 | 540 | 13.6 | 40 | 48 | RF24009DKR3 | Flange | |
ID41461DR | Production | 3700 | 4100 | 48 | 468 | 14.3 | 50 | 48 | RF24008DKR3 | Flange | |
ID18461D | Production | 1805 | 1880 | 56.2 | 437 | 17.4 | 58 | 48 | RF24008DKR3 | Flange | |
H108C11A | Production | 3400 | 3600 | 26 | 174 | 14 | 44 | 48 | RF12001DHKR3 | Flange |