Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
Part Number | Datasheet | Status | Min Freq. (MHz) | Max Freq. (MHz) | Typ Output Power (W) | Saturation Power (W) | Power Gain (dB) | Efficiency (%) | VDC | Package | Package Type |
IE26110P | Production | 2500 | 2690 | 25 | 110 | 19.1 | 40 | 48 | NS-AS01 | Flange | |
IE26085P | Production | - | - | 19 | - | - | - | 52 | NS-AS01 | Flange | |
IE23195WD | Production | 2300 | 2400 | 40 | 220 | 15.3 | 56 | 48 | RF12001DKR3 | Flange | |
IE21385D | Production | 2110 | 2170 | 63 | 385 | 15 | 56 | 48 | RF24001DKR3 | Flange | |
IE27330D | Production | 2620 | 2690 | 79 | 330 | 14.2 | 54 | 48 | RF24001DKR3 | Flange | |
IE27330P | Production | 2620 | 2690 | 63 | 330 | 15.4 | 39 | 48 | NS-AS01 | Flange | |
IE27275D | Production | 2575 | 2635 | 50 | 275 | 14.1 | 59 | 48 | RF24001DKR3 | Flange | |
IE27220PE | Production | 2620 | 2690 | 50 | 220 | 17 | 42 | 48 | NS-AS01 | Flange | |
IE27165PE | Production | 2620 | 2690 | 40 | 165 | 17 | 43 | 48 | NS-AS01 | Flange | |
IE36220W | Production | 3480 | 3520 | 50 | 230 | 15 | 34 | 48 | RF12002KR3 | Flange | |
IE36170WD | Production | 3520 | 3560 | 32 | 170 | 15 | 48 | 48 | RF12001DKR3 | Flange | |
IE36110W | Production | 3400 | 3600 | 25 | 110 | 17.1 | 35 | 48 | RF12001KR3 | Flange | |
IE36085W | Production | 3400 | 3600 | 19 | 85 | 17.3 | 35 | 48 | RF12002KR3 | Flange | |
IE27385D | Production | 2620 | 2690 | 69 | 385 | 14 | 53 | 48 | RF24001DKR3 | Flange |