Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
Part Number | Datasheet | Status | Min Freq. (MHz) | Max Freq. (MHz) | Typ Output Power (W) | Saturation Power (W) | Power Gain (dB) | Efficiency (%) | VDC | Package | Package Type |
H017 | Production | 1800 | 2700 | 2 | 28.2 | 17.9 | 30 | 48 | DFN66726L-Q2 | Surface Mount | |
H005C11D | Production | 1880 | 2025 | 30 | 170 | 17 | 48 | 48 | RF12001DHKR3-PK2 | Flange | |
H016C12A | Production | 1805 | 1880 | 50 | 320 | 13.9 | 56 | 48 | RF18010DKR3 | Flange | |
H016C11A | Production | 1805 | 2200 | 44 | 316 | 15.4 | 50 | 48 | RF18010DKR3 | Flange | |
H014C11A | Production | 1800 | 2700 | 71 | 398 | 13 | 49 | 48 | RF24010DKR3 | Flange | |
H012C12D | Production | 758 | 821 | 79 | 440 | 17.5 | 56 | 48 | RF24010DKR3 | Flange | |
H009C12A | Production | 1800 | 2200 | 79 | 398 | 14.7 | 52 | 48 | RF24010DKR3 | Flange | |
H009C11A | Production | 1805 | 1880 | 63 | 385 | 15.1 | 55 | 48 | RF24010DKR3 | Flange | |
H008C11A | Production | 3400 | 3800 | 26 | 174 | 14.1 | 44 | 48 | RF12001DHKR3 | Flange | |
H007C11A | Production | 2300 | 2400 | 40 | 240 | 15.3 | 55 | 48 | RF12001DHKR3 | Flange | |
H006C11D | Production | 1805 | 1880 | 45 | 220 | 15.8 | 54 | 48 | RF12001DHKR3 | Flange | |
H004 | Production | - | 6000 | 6.3 | 28 | 18.7 | 32 | 48 | DFN66726L-Q2 | Surface Mount | |
H002C12A | Production | 2496 | 2690 | 32 | 195 | 14.4 | 53 | 48 | RF12001DHKR3-PK2 | Flange | |
H002C11A | Production | 2580 | 2630 | 32 | 195 | 14.4 | 53 | 48 | RF12001DHKR3 | Flange |