Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
Part Number | Datasheet | Status | Min Freq. (MHz) | Max Freq. (MHz) | Typ Output Power (W) | Saturation Power (W) | Power Gain (dB) | Efficiency (%) | VDC | Package | Package Type |
H001C11A | Production | 1880 | 2025 | 32 | 195 | 16.9 | 48 | 48 | RF12001DKR3-PK2 | Flange | |
ID26275WD | Production | 2620 | 2690 | 54 | 316 | 14.1 | 51 | 48 | RF18010DKR3 | Flange | |
ID25275WD | Production | 2520 | 2630 | 40 | 316 | 14.4 | 50 | 48 | RF18010DKR3 | Flange | |
ID20275WD | Production | 1880 | 2025 | 48 | 282 | 15.3 | 53 | 48 | RF18010DKR3 | Flange | |
ID18275WD | Production | 1805 | 1880 | 50 | 331 | 14 | 56.4 | 48 | RF18010DKR3 | Flange | |
ID38601D | Production | 3700 | 3980 | 81.2 | 600 | 14.3 | 42 | 48 | RF24009DKR3 | Flange | |
ID46531D | Production | 4500 | 4600 | 71 | 510 | 13.1 | 42 | 48 | RF24009DKR3 | Flange | |
ID49531D | Production | 4800 | 5000 | 56.2 | 490 | 14 | 43 | 48 | RF24009DKR3 | Flange | |
ID38461DR | Production | 3700 | 3980 | 56.2 | 460 | 15 | 47 | 48 | RF24008DKR3 | Flange | |
ID19601D | Production | 1930 | 1995 | 81.3 | 600 | 16.2 | 48.2 | 48 | RF24009DKR3 | Flange | |
ID22601D | Production | 2110 | 2200 | 76 | 530 | 15.1 | 47 | 48 | RF24009DKR3 | Flange | |
ID26601D | Production | 2620 | 2690 | 85 | 600 | 15 | 47.4 | 48 | RF24009DKR3 | Flange | |
ID26411D | Production | 2570 | 2620 | 60 | 410 | 15.2 | 51.1 | 48 | RF24008DKR3 | Flange | |
ID37411D | Production | 3600 | 3800 | 56.2 | 410 | 14.4 | 47.2 | 48 | RF24008DKR3 | Flange |