Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
Part Number | Datasheet | Status | Min Freq. (MHz) | Max Freq. (MHz) | Typ Output Power (W) | Saturation Power (W) | Power Gain (dB) | Efficiency (%) | VDC | Package | Package Type |
ID38411DR | Production | 3700 | 4000 | 56.2 | 410 | 14.4 | 46.1 | 48 | RF24008DKR3 | Flange | |
ID41411DR | Production | 3700 | 4100 | 56.2 | 410 | 14.2 | 46.1 | 48 | RF24008DKR3 | Flange | |
ID36461D | Production | 3400 | 3600 | 56.2 | 460 | 14.4 | 46 | 48 | RF24008DKR3 | Flange | |
ID39084W | Production | 3700 | 4100 | 3 | 84 | 18 | 14.3 | 48 | RF12002KR3 | Flange | |
ID41501D | Production | 3700 | 4200 | 56.2 | 460 | 14 | 44 | 48 | RF24009DKR3 | Flange | |
ID18411D | Production | 1800 | 1880 | 56.2 | 410 | 18 | 54 | 48 | RF24008DKR3 | Flange | |
ID19411D | Production | 1995 | 2020 | 55 | 410 | 18 | 50 | 48 | RF24008DKR3 | Flange | |
ID20411D | Production | 1930 | 2200 | 56.2 | 410 | 16 | 48.1 | 48 | RF24008DKR3 | Flange | |
ID22411D | Production | 2110 | 2200 | 54 | 410 | 18 | 52 | 48 | RF24008DKR3 | Flange | |
RT12028P | Production | - | 6000 | 6.3 | 30 | 18 | 30 | 48 | NS-CS01 | Flange | |
ETQ2028P | Production | - | 6000 | 6.3 | 30 | 19 | 33 | 48 | DFN66726L-Q2 | Surface Mount | |
DT12060P | Production | - | 6000 | 14.1 | 65 | 17 | 37 | 48 | NS-CS01 | Flange | |
RT12055P | Production | - | 6000 | 13 | 60 | 16 | 34 | 48 | NS-CS01 | Flange | |
IE18165P | Production | 1805 | 1880 | 37 | 170 | 18.3 | 39 | 48 | NS-AS01 | Flange |